features trenchfet power mosfet 175 c junction temperature applications automotive 12-v boardnet SUD50P04-09L product summary v ds (v) r ds(on) ( ) i d (a) d -40 0.0094 @ v gs = - 10 v -50 - 40 0.0145 @ v gs = - 4.5 v -50 s g d p-channel mosfet to-252 s gd top view drain connected to tab ordering information: SUD50P04-09L absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -40 v gate-source voltage v gs 20 v continuous drain current t c = 25 c i d -50 d continuous drain current (t j = 175 c) t c = 125 c i d -50 d a pulsed drain current i dm - 100 a avalanche current i ar -50 repetitive a valanche energy a l = 0.1 mh e ar 125 mj power dissipation t c = 25 c p d 136 c w power dissipation t a = 25 c p d 3 b, c w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit jtitabit b t 10 sec r 15 18 junction-to-ambient b steady state r thja 40 50 c/w junction-to-case r thjc 0.82 1.1 c/w notes: a. duty cycle 1%. b. when mounted on 1? square pcb (fr-4 material). c. see soa curve for voltage derating. d. package limited. p-channel 40 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 5
specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = - 250 a -40 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a -1 -3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = - 32 v, v gs = 0 v -1 zero gate voltage drain current i dss v ds = - 32 v, v gs = 0 v, t j = 125 c -50 g dss v ds = - 32 v, v gs = 0 v, t j = 175 c - 150 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v -50 a v gs = - 10 v, i d = - 24 a 0.0075 0.0094 drain source on state resistance a r ds( ) v gs = - 10 v, i d = - 50 a, t j = 125 c 0.014 drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 50 a, t j = 175 c 0.017 v gs = - 4.5 v, i d = - 18 a 0.0115 0.0145 forward transconductance a g fs v ds = - 5 v, i d = - 24 a 73 s dynamic b input capacitance c iss 4800 output capacitance c oss v gs = 0 v, v ds = - 25 v, f = 1 mhz 700 pf reversen transfer capacitance c rss 550 total gate charge c q g 102 150 gate-source charge c q gs v ds = - 20 v, v gs = - 10 v, i d = - 50 a 18.5 nc gate-drain charge c q gd ds , gs , d 27 turn-on delay time c t d(on) 10 15 rise time c t r v dd = - 20 v, r l = 0.4 60 90 ns turn-off delay time c t d(off) v dd = 20 v , r l = 0 . 4 i d - 50 a, v gen = - 10 v, r g = 6 145 220 ns fall time c t f d gen g 140 220 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s -50 a pulsed current i sm - 100 a forward voltage a v sd i f = - 50 a, v gs = 0 v - 1.0 - 1.5 v reverse recovery time t rr i f = - 50 a, di/dt = 100 a/ s 55 85 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. www.freescale.net.cn 2 / 5 SUD50P04-09L p-channel 40 v (d-s) 175 c mosfet
typical characteristics (25 c unless noted) 0 20 40 60 80 100 012345 0 2 4 6 8 10 0 20 40 60 80 100 120 0.000 0.004 0.008 0.012 0.016 0.020 0 20406080100 0 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 120 0 20406080100 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) - on-resistance ( q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) r ds(on) ) v gs v gs - gate-to-source voltage (v) - transconductance (s) g fs 25 c -55 c t c = 125 c v ds = 20 v i d = 50 a v gs = 10 v c iss c oss c rss t c = - 55 c 25 c 125 c 3 v 4 v 2 v v gs = 10 thru 5 v v gs = 4.5 v www.freescale.net.cn 3 / 5 SUD50P04-09L p-channel 40 v (d-s) 175 c mosfet
typical characteristics (25 c unless noted) 0.0 0.3 0.6 0.9 1.2 1.5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) - on-resistance ( t j - junction temperature ( c) v sd - source-to-drain voltage (v) r ds(on) ) - source current (a) i s 100 10 1 v gs = 10 v i d = 50 a t j = 25 c t j = 150 c thermal ratings 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized effective transient thermal impedance 1 maximum avalanche and drain current vs. case t emperature t c - case temperature ( c) - drain current (a) i d 0.2 0.1 0.05 0.02 duty cycle = 0.5 single pulse safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 1 100 t c = 25 c single pulse - drain current (a) i d i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 www.freescale.net.cn 4 / 5 SUD50P04-09L p-channel 40 v (d-s) 175 c mosfet
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